STP120NF10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Turn-Off Delay Time :

132 ns

Threshold Voltage :

4V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 60A, 10V

Number of Terminations :

3

Element Configuration :

Single

Height :

9.15mm

Length :

10.4mm

JEDEC-95 Code :

TO-220AB

Rise Time :

90ns

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Resistance :

10.5mOhm

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

550 mJ

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

110A

ECCN Code :

EAR99

Vgs (Max) :

±20V

Series :

STripFET™ II

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Pin Count :

3

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Weight :

4.535924g

Pulsed Drain Current-Max (IDM) :

440A

Voltage - Rated DC :

100V

Power Dissipation-Max :

312W Tc

REACH SVHC :

No SVHC

Turn On Delay Time :

25 ns

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

312W

Additional Feature :

AVALANCHE RATED

Base Part Number :

STP120

Fall Time (Typ) :

68 ns

Width :

4.6mm

Lead Free :

Lead Free

Current Rating :

120A

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

233nC @ 10V

Package / Case :

TO-220-3