STP120N4F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

110W

Fall Time (Typ) :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

FET Type :

N-Channel

Number of Pins :

3

ECCN Code :

EAR99

Case Connection :

DRAIN

Turn On Delay Time :

20 ns

Transistor Application :

SWITCHING

Lead Free :

Lead Free

JESD-609 Code :

e3

Turn-Off Delay Time :

40 ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Pin Count :

3

Series :

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Continuous Drain Current (ID) :

80A

Height :

15.75mm

Number of Terminations :

3

Width :

4.6mm

Base Part Number :

STP120

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

3850pF @ 25V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Length :

10.4mm

DS Breakdown Voltage-Min :

40V

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 40A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Mounting Type :

Through Hole

Factory Lead Time :

20 Weeks

Rise Time :

70ns

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Vgs (Max) :

±20V

Power Dissipation-Max :

110W Tc

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Package / Case :

TO-220-3