STP110N8F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

80V

Factory Lead Time :

20 Weeks

Mount :

Through Hole

Number of Terminations :

3

Vgs (Max) :

±20V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

200W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0065ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

180 mJ

Pulsed Drain Current-Max (IDM) :

440A

FET Type :

N-Channel

Base Part Number :

STP110

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 55A, 10V

Series :

STripFET™ F6

Input Capacitance (Ciss) (Max) @ Vds :

9130pF @ 40V

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Continuous Drain Current (ID) :

110A

Packaging :

Tube

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

80V

Number of Elements :

1