STP10P6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

Mounting Type :

Through Hole

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

80 mJ

Rds On (Max) @ Id, Vgs :

160m Ω @ 5A, 10V

Factory Lead Time :

20 Weeks

Continuous Drain Current (ID) :

10A

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drain to Source Breakdown Voltage :

60V

Base Part Number :

STP10

Power Dissipation :

35W

Rise Time :

7ns

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

40A

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Power Dissipation-Max :

30W Tc

Turn-Off Delay Time :

16.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 48V

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Vgs (Max) :

±20V

Operating Temperature :

175°C TJ

ECCN Code :

EAR99

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Series :

DeepGATE™, STripFET™ VI