STN951
- Mfr.Part #
- STN951
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A SOT223
- Stock
- 355
- In Stock :
- 355
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 130MHz
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 4
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Lead Free
- Max Collector Current :
- 5A
- Base Part Number :
- STN95
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 6.5mm
- Package / Case :
- TO-261-4, TO-261AA
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Width :
- 3.5mm
- Radiation Hardening :
- No
- hFE Min :
- 150
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 1V
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Termination :
- SMD/SMT
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 130MHz
- Height :
- 1.8mm
- JESD-609 Code :
- e3
- Transition Frequency :
- 130MHz
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 1.6W
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-G4
- Max Power Dissipation :
- 1.6W
- Datasheets
- STN951

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
STN951 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 2A 1V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 130MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 5A volts.
STN951 Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 5A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
STN951 Applications
There are a lot of STMicroelectronics
STN951 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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