STN2NE10L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Rise Time :

17ns

Turn-Off Delay Time :

22 ns

Power Dissipation-Max :

2.5W Tc

Current Rating :

1.8A

Additional Feature :

LOW THRESHOLD

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

7.2A

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

JESD-30 Code :

R-PDSO-G4

ECCN Code :

EAR99

Base Part Number :

STN2N

Continuous Drain Current (ID) :

1.8A

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

400m Ω @ 1A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

TO-261-4, TO-261AA

Avalanche Energy Rating (Eas) :

20 mJ

Transistor Application :

SWITCHING

Number of Elements :

1

FET Type :

N-Channel

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

8 ns

Number of Terminations :

4

Drain-source On Resistance-Max :

0.45Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

STripFET™

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

2.5W

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

345pF @ 25V

Drain Current-Max (Abs) (ID) :

2A

Terminal Position :

Dual