STN2NE10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

2A

Current Rating :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2A

FET Type :

N-Channel

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

25 ns

Power Dissipation-Max :

2.5W Tc

Base Part Number :

STN2N

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Package / Case :

TO-261-4, TO-261AA

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Pin Count :

4

Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

100V

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Number of Pins :

4

Rise Time :

17ns

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

8A

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

20 mJ

Fall Time (Typ) :

7 ns

Rds On (Max) @ Id, Vgs :

400m Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

305pF @ 25V

Number of Terminations :

4

Terminal Position :

Dual

Series :

STripFET™

Mount :

Surface Mount