STN1NF20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

1A

Mounting Type :

Surface Mount

Number of Terminations :

4

Package / Case :

TO-261-4, TO-261AA

Case Connection :

DRAIN

Continuous Drain Current (ID) :

1A

Terminal Position :

Dual

Number of Elements :

1

Factory Lead Time :

12 Weeks

Packaging :

Cut Tape (CT)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

200V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 10V

Power Dissipation-Max :

2W Ta

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Rise Time :

5.6ns

Series :

STripFET™ II

Pulsed Drain Current-Max (IDM) :

4A

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 500mA, 10V

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Avalanche Energy Rating (Eas) :

70 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 25V

ECCN Code :

EAR99

Base Part Number :

STN1N

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Element Configuration :

Single

Fall Time (Typ) :

12.4 ns

FET Type :

N-Channel

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA