STN1N20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Voltage :

200V

Width :

3.5mm

Rise Time :

6ns

Nominal Vgs :

3 V

Drain to Source Breakdown Voltage :

200V

Voltage - Rated DC :

200V

Current - Continuous Drain (Id) @ 25°C :

1A Tc

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

15.7nC @ 10V

Series :

MESH OVERLAY™

Transistor Application :

SWITCHING

Current Rating :

1A

Number of Pins :

3

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

Length :

6.5mm

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Current :

1A

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-G4

Vgs (Max) :

±20V

Fall Time (Typ) :

5 ns

Threshold Voltage :

3V

Turn On Delay Time :

6 ns

Dual Supply Voltage :

200V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Height :

1.8mm

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

206pF @ 25V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 500mA, 10V

Base Part Number :

STN1N

Power Dissipation :

2.9W

Lead Free :

Lead Free

Number of Terminations :

4

Mount :

Surface Mount

Power Dissipation-Max :

2.9W Tc

Resistance :

1.5Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

JESD-609 Code :

e3

Case Connection :

DRAIN