STL57N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

84 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Turn-Off Delay Time :

84 ns

JESD-30 Code :

S-PSSO-N4

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Avalanche Energy Rating (Eas) :

960 mJ

DS Breakdown Voltage-Min :

650V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

22.5A

Drain-source On Resistance-Max :

0.069Ohm

Packaging :

Digi-Reel®

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta 22.5A Tc

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

90A

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

8

Power Dissipation-Max :

2.8W Ta 189W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

ECCN Code :

EAR99

Series :

MDmesh™ V

Rds On (Max) @ Id, Vgs :

69m Ω @ 20A, 10V

Drain to Source Voltage (Vdss) :

650V

Package / Case :

8-PowerVDFN

Drain Current-Max (Abs) (ID) :

22A

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Height :

950μm

Width :

8mm

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Elements :

1

Mount :

Surface Mount

Base Part Number :

STL57

RoHS Status :

ROHS3 Compliant

Length :

8mm

Power Dissipation :

2.8W