STL52N25M5
- Mfr.Part #
- STL52N25M5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 28A POWERFLAT
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PDSO-F5
- Fall Time (Typ) :
- 82 ns
- Transistor Element Material :
- SILICON
- Element Configuration :
- Dual
- Power Dissipation-Max :
- 2.5W Ta 110W Tc
- Number of Elements :
- 1
- Power Dissipation :
- 110W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 14A, 10V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Series :
- MDmesh™ V
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Vgs (Max) :
- ±25V
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 250V
- Turn-Off Delay Time :
- 64 ns
- Resistance :
- 65mOhm
- Additional Feature :
- ULTRA LOW-ON RESISTANCE
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerVDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 4.2A
- FET Type :
- N-Channel
- Pin Count :
- 8
- Base Part Number :
- STL52
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 230 mJ
- Number of Terminations :
- 5
- Turn On Delay Time :
- 40 ns
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 25V
- Rise Time :
- 18ns
- Continuous Drain Current (ID) :
- 28A
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 50V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Datasheets
- STL52N25M5

N-Channel Tape & Reel (TR) 65m Ω @ 14A, 10V ±25V 1770pF @ 50V 47nC @ 10V 8-PowerVDFN
STL52N25M5 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 230 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1770pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 28A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=250V. And this device has 250V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 4.2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 64 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 40 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STL52N25M5 Features
the avalanche energy rating (Eas) is 230 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 64 ns
STL52N25M5 Applications
There are a lot of STMicroelectronics
STL52N25M5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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