STI35N65M5
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- Mfr.Part #
- STI35N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 27A I2PAK
- Stock
- 8,529
- In Stock ：
- 8,529
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 650V
- Vgs (Max) :
- ±25V
- Threshold Voltage :
- 4V
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 800 mJ
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Elements :
- 1
- Rise Time :
- 12ns
- Series :
- MDmesh™ V
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 83nC @ 10V
- Height :
- 10.75mm
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Width :
- 4.6mm
- Length :
- 10.4mm
- Fall Time (Typ) :
- 16 ns
- Turn-Off Delay Time :
- 60 ns
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 98m Ω @ 13.5A, 10V
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Gate to Source Voltage (Vgs) :
- 25V
- Case Connection :
- Isolated
- Turn On Delay Time :
- 60 ns
- Base Part Number :
- STI35N
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 160W
- Continuous Drain Current (ID) :
- 27A
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 160W Tc
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3750pF @ 100V
- Drain-source On Resistance-Max :
- 0.098Ohm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Datasheets
- STI35N65M5
N-Channel Tube 98m Ω @ 13.5A, 10V ±25V 3750pF @ 100V 83nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STI35N65M5 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3750pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 60 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
STI35N65M5 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 60 ns
a threshold voltage of 4V
STI35N65M5 Applications
There are a lot of STMicroelectronics
STI35N65M5 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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