STI300N4F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

20 Weeks

Drain to Source Breakdown Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Pin Count :

3

Lead Free :

Lead Free

Mount :

Through Hole

Radiation Hardening :

No

Turn-Off Delay Time :

190 ns

Base Part Number :

STI300N

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Length :

10.4mm

Input Capacitance (Ciss) (Max) @ Vds :

13800pF @ 25V

Number of Terminations :

3

Turn On Delay Time :

28 ns

Height :

9.35mm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Number of Elements :

1

Width :

4.6mm

Pulsed Drain Current-Max (IDM) :

640A

Series :

DeepGATE™, STripFET™ VI

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

160A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

300W Tc

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

95 ns

Rise Time :

98ns

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 80A, 10V

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Drain-source On Resistance-Max :

0.002Ohm

ECCN Code :

EAR99