STGY50NC60WD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Turn-Off Delay Time :

240 ns

Mounting Type :

Through Hole

Input Type :

Standard

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Packaging :

Tube

REACH SVHC :

No SVHC

Reverse Recovery Time :

55 ns

Transistor Element Material :

SILICON

Termination :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

110A

Power Dissipation :

260W

Turn On Time :

69 ns

Contact Plating :

Tin

Rise Time :

17ns

Base Part Number :

STGY50

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 40A

Height :

20.3mm

Package / Case :

TO-247-3

Test Condition :

390V, 40A, 10 Ω, 15V

Factory Lead Time :

8 Weeks

Series :

PowerMESH™

Collector Emitter Breakdown Voltage :

600V

Switching Energy :

365μJ (on), 560μJ (off)

Pin Count :

3

Lead Free :

Lead Free

Length :

15.9mm

Number of Pins :

247

Collector Emitter Saturation Voltage :

2.5V

JESD-30 Code :

R-PSFM-T3

Power - Max :

278W

Width :

5.3mm

Number of Elements :

1

Turn On Delay Time :

52 ns

Gate Charge :

195nC

Gate-Emitter Thr Voltage-Max :

5.75V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Turn Off Time-Nom (toff) :

271 ns

Current - Collector Pulsed (Icm) :

180A

Td (on/off) @ 25°C :

52ns/240ns

Collector Emitter Voltage (VCEO) :

600V

Radiation Hardening :

No

Element Configuration :

Single

Max Power Dissipation :

278W

Transistor Application :

POWER CONTROL

Mount :

Through Hole

ECCN Code :

EAR99

Number of Terminations :

3

Gate-Emitter Voltage-Max :

20V