STGD7NC60HT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

18.5ns/72ns

Turn-Off Delay Time :

116 ns

Mounting Type :

Surface Mount

Element Configuration :

Single

Turn On Time :

25.5 ns

Number of Pins :

3

Width :

6.2mm

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

70W

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Mount :

Surface Mount

Number of Terminations :

2

Collector Emitter Saturation Voltage :

2.5V

Base Part Number :

STGD7

Pin Count :

3

Current - Collector Pulsed (Icm) :

50A

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

600V

Transistor Application :

POWER CONTROL

JEDEC-95 Code :

TO-252AA

Length :

6.6mm

Turn Off Time-Nom (toff) :

221 ns

Gate-Emitter Thr Voltage-Max :

5.75V

Terminal Finish :

Matte Tin (Sn) - annealed

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 7A

Gate-Emitter Voltage-Max :

20V

ECCN Code :

EAR99

Weight :

3.949996g

Collector Emitter Voltage (VCEO) :

600V

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Rating :

7A

Terminal Form :

Gull wing

Height :

2.4mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Max Collector Current :

25A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

390V, 7A, 10 Ω, 15V

JESD-609 Code :

e3

Series :

PowerMESH™

Power Dissipation :

70W

Input Type :

Standard

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Switching Energy :

95μJ (on), 115μJ (off)

Rise Time :

8.5ns

Max Breakdown Voltage :

600V

Continuous Collector Current :

14A

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Gate Charge :

35nC

Turn On Delay Time :

18.5 ns

Lead Free :

Lead Free