STGD7NC60HT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Turn-Off Delay Time :

116 ns

Number of Pins :

3

JEDEC-95 Code :

TO-252AA

Max Power Dissipation :

70W

Base Part Number :

STGD7

Height :

2.4mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - annealed

Weight :

3.949996g

Turn On Time :

25.5 ns

Turn Off Time-Nom (toff) :

221 ns

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge :

35nC

Power Dissipation :

70W

Turn On Delay Time :

18.5 ns

Length :

6.6mm

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Collector Pulsed (Icm) :

50A

Terminal Form :

Gull wing

Number of Terminations :

2

Test Condition :

390V, 7A, 10 Ω, 15V

Max Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Continuous Collector Current :

14A

Max Collector Current :

25A

Collector Emitter Voltage (VCEO) :

600V

Element Configuration :

Single

Current Rating :

7A

Pin Count :

3

Voltage - Rated DC :

600V

Gate-Emitter Thr Voltage-Max :

5.75V

Switching Energy :

95μJ (on), 115μJ (off)

Peak Reflow Temperature (Cel) :

260

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL

Width :

6.2mm

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Collector Emitter Saturation Voltage :

2.5V

Series :

PowerMESH™

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 7A

Radiation Hardening :

No

Td (on/off) @ 25°C :

18.5ns/72ns

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Rise Time :

8.5ns

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

20V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

600V