STF6N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.25A, 10V

Length :

10.4mm

Fall Time (Typ) :

22.5 ns

Number of Channels :

1

Element Configuration :

Single

Series :

MDmesh™ II Plus

Rise Time :

7.4ns

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Turn On Delay Time :

9.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

232pF @ 100V

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Turn-Off Delay Time :

24 ns

Width :

4.6mm

Mounting Type :

Through Hole

Height :

16.4mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

20W Tc

Continuous Drain Current (ID) :

4.5A

FET Type :

N-Channel

Power Dissipation :

20W

Factory Lead Time :

16 Weeks

Number of Pins :

3

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Base Part Number :

STF6N