STF6N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SuperMESH3™

Element Configuration :

Single

Power Dissipation-Max :

25W Tc

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Continuous Drain Current (ID) :

5A

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

5A

Rise Time :

11ns

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 50V

Drain to Source Breakdown Voltage :

525V

Threshold Voltage :

3.75V

Base Part Number :

STF6N

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

110 mJ

Power Dissipation :

25W

Fall Time (Typ) :

18 ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

ULTRA-LOW RESISTANCE

Number of Elements :

1

ECCN Code :

EAR99

FET Type :

N-Channel

Transistor Element Material :

SILICON

Number of Terminations :

3

REACH SVHC :

No SVHC

Length :

10.4mm

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.5A, 10V

Turn On Delay Time :

10 ns

Turn-Off Delay Time :

31 ns

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Number of Pins :

3

Width :

4.6mm

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

20A

Height :

16.4mm

Vgs(th) (Max) @ Id :

4.5V @ 50μA

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Pin Count :

3

Mount :

Through Hole

Case Connection :

Isolated

Packaging :

Tube