STE70NM60
- Mfr.Part #
- STE70NM60
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOTOP
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 70A ISOTOP
- Stock
- 23,336
- In Stock :
- 23,336
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 55mOhm
- ECCN Code :
- EAR99
- Current Rating :
- 70A
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 95ns
- Terminal Form :
- UNSPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 266nC @ 10V
- Terminal Position :
- UPPER
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 76 ns
- Voltage - Rated DC :
- 600V
- Factory Lead Time :
- 12 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 30A, 10V
- Number of Terminations :
- 4
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 600W Tc
- Turn On Delay Time :
- 55 ns
- Mount :
- Chassis Mount, Screw
- Mounting Type :
- Chassis Mount
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Package / Case :
- ISOTOP
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 70A
- Base Part Number :
- STE70
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Pulsed Drain Current-Max (IDM) :
- 280A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 7300pF @ 25V
- Power Dissipation :
- 600W
- Drain to Source Breakdown Voltage :
- 600V
- Series :
- MDmesh™
- Threshold Voltage :
- 4V
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- REACH SVHC :
- No SVHC
- Datasheets
- STE70NM60

N-Channel Tube 55m Ω @ 30A, 10V ±30V 7300pF @ 25V 266nC @ 10V ISOTOP
STE70NM60 Description
MDmeshTM is a revolutionary MOSFET technology that combines the Multiple Drain process with PowerMESHTM's horizontal layout. STE70NM60 presents excellent avalanche characteristics, impressive DV/DT, and low on-resistance.
STE70NM60 Features
-
TYPICAL RDS(on) = 0.050|?
-
IMPROVED ESD CAPABILITY
-
INDUSTRY?ˉS LOWEST ON-RESISTANCE
-
TIGHT PROCESS CONTROL
-
HIGH dv/dt AND AVALANCHE CAPABILITIES
-
LOW GATE INPUT RESISTANCE
-
LOW INPUT CAPACITANCE AND GATE CHARGE
STE70NM60 Applications
-
The low current peripheral driver
-
Control of IC inputs
-
Replaces general-purpose transistors in digital applications
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