STE70NM50

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Base Part Number :

STE70

Rds On (Max) @ Id, Vgs :

50m Ω @ 30A, 10V

Package / Case :

ISOTOP

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

38.2mm

Continuous Drain Current (ID) :

30A

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Vgs (Max) :

±30V

Number of Elements :

1

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

REACH SVHC :

No SVHC

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

51 ns

Operating Temperature :

150°C TJ

Resistance :

50mOhm

Drain to Source Breakdown Voltage :

500V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

266nC @ 10V

Threshold Voltage :

4V

Power Dissipation-Max :

600W Tc

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

280A

Current Rating :

70A

Pin Count :

4

Mount :

Chassis Mount, Screw

Mounting Type :

Chassis Mount

Fall Time (Typ) :

46 ns

Terminal Form :

UNSPECIFIED

Lead Free :

Lead Free

Series :

MDmesh™

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

UPPER

Power Dissipation :

600W

Width :

25.5mm

Voltage - Rated DC :

500V

Height :

9.1mm

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Rise Time :

58ns

RoHS Status :

ROHS3 Compliant