STB75NH02LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Series :

STripFET™ III

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Fall Time (Typ) :

25 ns

Rise Time :

200ns

Packaging :

Cut Tape (CT)

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

24V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Turn-Off Delay Time :

18 ns

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Voltage - Rated DC :

24V

Power Dissipation-Max :

80W Tc

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

60A

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Pulsed Drain Current-Max (IDM) :

240A

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Current Rating :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STB75N

Pin Count :

3

Peak Reflow Temperature (Cel) :

245

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.014Ohm

Number of Elements :

1

Power Dissipation :

80W

FET Type :

N-Channel

Turn On Delay Time :

12 ns

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 15V

Case Connection :

DRAIN