STB70NF03LT4

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Mfr.Part #
STB70NF03LT4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 70A D2PAK
Stock
11,446
In Stock :
11,446

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Qualification Status :
Not Qualified
Number of Terminations :
2
Continuous Drain Current (ID) :
70A
Gate to Source Voltage (Vgs) :
18V
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
245
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSSO-G2
ECCN Code :
EAR99
Terminal Form :
Gull wing
Rise Time :
165ns
Terminal Finish :
Matte Tin (Sn) - annealed
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 5V
Mount :
Surface Mount
Vgs (Max) :
±18V
Packaging :
Tape and Reel (TR)
Series :
STripFET™ II
Current Rating :
70A
Avalanche Energy Rating (Eas) :
500 mJ
Mounting Type :
Surface Mount
Turn On Delay Time :
22 ns
REACH SVHC :
No SVHC
Current - Continuous Drain (Id) @ 25°C :
70A Tc
Voltage - Rated DC :
30V
Pbfree Code :
yes
Termination :
SMD/SMT
Lead Free :
Lead Free
Dual Supply Voltage :
30V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id :
1V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Base Part Number :
STB70N
Input Capacitance (Ciss) (Max) @ Vds :
1440pF @ 25V
Case Connection :
DRAIN
Fall Time (Typ) :
25 ns
Power Dissipation :
100W
Pin Count :
3
Drain to Source Breakdown Voltage :
30V
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~175°C TJ
Resistance :
9.5MOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
280A
Reach Compliance Code :
not_compliant
Transistor Application :
SWITCHING
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
9.5m Ω @ 35A, 10V
FET Type :
N-Channel
Nominal Vgs :
1 V
Power Dissipation-Max :
100W Tc
Time@Peak Reflow Temperature-Max (s) :
30
Turn-Off Delay Time :
21 ns
Datasheets
STB70NF03LT4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB70NF03LT4 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Base Part Number:STB70N, Operating Temperature:-55°C~175°C TJ, STB70NF03LT4 pinout, STB70NF03LT4 datasheet PDF, STB70NF03LT4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB70NF03LT4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB70NF03LT4


N-Channel Tape & Reel (TR) 9.5m Ω @ 35A, 10V ±18V 1440pF @ 25V 30nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB70NF03LT4 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1440pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 70A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.Peak drain current is 280A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 18V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

STB70NF03LT4 Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 280A.


STB70NF03LT4 Applications


There are a lot of STMicroelectronics
STB70NF03LT4 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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