STB37N60DM2AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Base Part Number :

STB37N

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.11Ohm

DS Breakdown Voltage-Min :

600V

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

210W Tc

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Case Connection :

DRAIN

Continuous Drain Current (ID) :

28A

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

112A

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

110m Ω @ 14A, 10V

Vgs (Max) :

±25V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

650 mJ

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

17 Weeks

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

ECCN Code :

EAR99

Number of Elements :

1

Series :

Automotive, AEC-Q101, MDmesh™ DM2