STB30NF10T4
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- Mfr.Part #
- STB30NF10T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 35A D2PAK
- Stock
- 14,789
- In Stock ：
- 14,789
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 4.6mm
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1180pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 10 ns
- Mount :
- Surface Mount
- Power Dissipation :
- 115W
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Continuous Drain Current (ID) :
- 15A
- Turn On Delay Time :
- 15 ns
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 275 mJ
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Current Rating :
- 35A
- JESD-609 Code :
- e3
- Width :
- 9.35mm
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 100V
- Power Dissipation-Max :
- 115W Tc
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 15A, 10V
- Threshold Voltage :
- 3V
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Additional Feature :
- AVALANCHE RATED
- Length :
- 10.4mm
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Series :
- STripFET™ II
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 45mOhm
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 245
- Drain to Source Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- Base Part Number :
- STB30N
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 40ns
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 45 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STB30NF10T4
N-Channel Tape & Reel (TR) 45m Ω @ 15A, 10V ±20V 1180pF @ 25V 55nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB30NF10T4 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 275 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1180pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 15A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STB30NF10T4 Features
the avalanche energy rating (Eas) is 275 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
a threshold voltage of 3V
STB30NF10T4 Applications
There are a lot of STMicroelectronics
STB30NF10T4 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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