STB30NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 50V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

900 mJ

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Drain Current-Max (Abs) (ID) :

25A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Pin Count :

4

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Element Configuration :

Single

Continuous Drain Current (ID) :

12.5A

Operating Temperature :

150°C TJ

Resistance :

130mOhm

Power Dissipation :

190W

Base Part Number :

STB30N

Rise Time :

50ns

Fall Time (Typ) :

75 ns

Number of Terminations :

2

Power Dissipation-Max :

190W Tc

Rds On (Max) @ Id, Vgs :

130m Ω @ 12.5A, 10V

Number of Pins :

3

Series :

FDmesh™ II

Turn-Off Delay Time :

110 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Nominal Vgs :

4 V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

25V