STB30NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

12.5A

Qualification Status :

Not Qualified

Turn-Off Delay Time :

110 ns

Number of Terminations :

2

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 50V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

600V

Transistor Application :

SWITCHING

Series :

FDmesh™ II

Fall Time (Typ) :

75 ns

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

25A

Power Dissipation-Max :

190W Tc

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

900 mJ

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Rise Time :

50ns

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

25A Tc

JESD-30 Code :

R-PSSO-G2

Nominal Vgs :

4 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

130m Ω @ 12.5A, 10V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Pin Count :

4

Number of Pins :

3

Mount :

Surface Mount

Base Part Number :

STB30N

Resistance :

130mOhm

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

190W

REACH SVHC :

No SVHC