STB35NF10T4
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- Mfr.Part #
- STB35NF10T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 40A D2PAK
- Stock
- 490
- In Stock ：
- 490
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Nominal Vgs :
- 3 V
- Terminal Finish :
- Matte Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 17.5A, 10V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 15 ns
- Drain to Source Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Height :
- 4.6mm
- Continuous Drain Current (ID) :
- 40A
- Turn On Delay Time :
- 17 ns
- Element Configuration :
- Single
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 245
- Input Capacitance (Ciss) (Max) @ Vds :
- 1550pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Termination :
- SMD/SMT
- Base Part Number :
- STB35N
- Rise Time :
- 60ns
- Threshold Voltage :
- 3V
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 60 ns
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 115W Tc
- Width :
- 10.4mm
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 100V
- Mount :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- STripFET™ II
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Current Rating :
- 40A
- Power Dissipation :
- 115W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-PSSO-G2
- Dual Supply Voltage :
- 100V
- Length :
- 10.75mm
- Packaging :
- Tape and Reel (TR)
- Datasheets
- STB35NF10T4
N-Channel Tape & Reel (TR) 35m Ω @ 17.5A, 10V ±20V 1550pF @ 25V 55nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB35NF10T4 Overview
The maximum input capacitance of this device is 1550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 40A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
STB35NF10T4 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 60 ns
a threshold voltage of 3V
STB35NF10T4 Applications
There are a lot of STMicroelectronics
STB35NF10T4 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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