STB33N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

MDmesh™ M2

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Terminal Form :

Gull wing

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.14Ohm

FET Type :

N-Channel

Case Connection :

DRAIN

Number of Elements :

1

Element Configuration :

Single

Turn On Delay Time :

13.5 ns

Packaging :

Cut Tape (CT)

DS Breakdown Voltage-Min :

650V

Rds On (Max) @ Id, Vgs :

140m Ω @ 12A, 10V

Width :

9.35mm

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

96A

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

24A

Length :

10.4mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

780 mJ

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.6mm

Base Part Number :

STB33N

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1790pF @ 100V

Factory Lead Time :

26 Weeks

Drain to Source Voltage (Vdss) :

650V

Reach Compliance Code :

not_compliant

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

72.5 ns

Power Dissipation-Max :

190W Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±25V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

41.5nC @ 10V

Gate to Source Voltage (Vgs) :

25V