STB33N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

125m Ω @ 13A, 10V

Power Dissipation :

190W

Number of Pins :

3

Base Part Number :

STB33N

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

16 ns

Mount :

Surface Mount

Turn-Off Delay Time :

109 ns

Input Capacitance (Ciss) (Max) @ Vds :

1781pF @ 100V

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±25V

Fall Time (Typ) :

9 ns

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Continuous Drain Current (ID) :

26A

Gate Charge (Qg) (Max) @ Vgs :

45.5nC @ 10V

ECCN Code :

EAR99

Factory Lead Time :

26 Weeks

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Packaging :

Cut Tape (CT)

Weight :

3.949996g

Mounting Type :

Surface Mount

Series :

MDmesh™ II Plus

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1

Power Dissipation-Max :

190W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

9.6ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED