STB32N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STB32N

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

24A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MDmesh™ V

Additional Feature :

AVALANCHE ENERGY RATED

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

3320pF @ 100V

Factory Lead Time :

17 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

10.4mm

Number of Elements :

1

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Gate to Source Voltage (Vgs) :

25V

Terminal Finish :

Matte Tin (Sn) - annealed

Drain to Source Breakdown Voltage :

650V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Rds On (Max) @ Id, Vgs :

119m Ω @ 12A, 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Number of Pins :

3

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

16 ns

Packaging :

Cut Tape (CT)

Rise Time :

12ns

Pulsed Drain Current-Max (IDM) :

96A

Turn-Off Delay Time :

53 ns

Height :

4.6mm

Mount :

Surface Mount

Pin Count :

4

Element Configuration :

Single

Number of Terminations :

2

Resistance :

119mOhm

Length :

10.75mm

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

245

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

53 ns

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Radiation Hardening :

No

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

650 mJ

Power Dissipation :

150W

Power Dissipation-Max :

150W Tc