SQJ858AEP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

2V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Power Dissipation-Max :

48W Tc

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

6.3mOhm @ 14A, 10V

Supplier Device Package :

PowerPAK® SO-8

Mounting Type :

Surface Mount

Number of Elements :

1

Weight :

506.605978mg

Mount :

Surface Mount

REACH SVHC :

Unknown

Rise Time :

9ns

Max Operating Temperature :

175°C

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Drain to Source Resistance :

6.3mOhm

Fall Time (Typ) :

8 ns

Continuous Drain Current (ID) :

58A

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Published :

2014

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Series :

Automotive, AEC-Q101, TrenchFET®

Input Capacitance :

2.45nF

Drain to Source Voltage (Vdss) :

40V

Turn On Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® SO-8

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 20V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Turn-Off Delay Time :

26 ns

Rds On Max :

6.3 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Power Dissipation :

48W