SQJ840EP-T1_GE3
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- Mfr.Part #
- SQJ840EP-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 30A PPAK SO-8
- Stock
- 35,779
- In Stock ：
- 35,779
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 506.605978mg
- Rds On Max :
- 9.3 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~175°C TJ
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 17 ns
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Supplier Device Package :
- PowerPAK® SO-8
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 11ns
- Max Operating Temperature :
- 175°C
- Continuous Drain Current (ID) :
- 30A
- Threshold Voltage :
- 1.7V
- Drain to Source Breakdown Voltage :
- 30V
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Number of Pins :
- 8
- Power Dissipation-Max :
- 46W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- Unknown
- Lead Free :
- Lead Free
- Package / Case :
- PowerPAK® SO-8
- Drain to Source Resistance :
- 9.3mOhm
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Nominal Vgs :
- 1.7 V
- Drain to Source Voltage (Vdss) :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 15V
- Mounting Type :
- Surface Mount
- Input Capacitance :
- 1.9nF
- Published :
- 2016
- Rds On (Max) @ Id, Vgs :
- 9.3mOhm @ 10.3A, 10V
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Turn On Delay Time :
- 11 ns
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 28 ns
- Datasheets
- SQJ840EP-T1_GE3
N-Channel Tape & Reel (TR) 9.3mOhm @ 10.3A, 10V ±20V 1900pF @ 15V 38nC @ 10V 30V PowerPAK® SO-8
SQJ840EP-T1_GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1900pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [28 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 9.3mOhm.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.7V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SQJ840EP-T1_GE3 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 28 ns
single MOSFETs transistor is 9.3mOhm
a threshold voltage of 1.7V
a 30V drain to source voltage (Vdss)
SQJ840EP-T1_GE3 Applications
There are a lot of Vishay Siliconix
SQJ840EP-T1_GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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