SPS01N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Drain-source On Resistance-Max :

6Ohm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

650V

Avalanche Energy Rating (Eas) :

20 mJ

Element Configuration :

Single

Number of Elements :

1

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Stub Leads, IPak

JEDEC-95 Code :

TO-251AA

Rise Time :

25ns

ECCN Code :

EAR99

Termination :

Through Hole

Turn-Off Delay Time :

55 ns

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Number of Pins :

3

Published :

2005

Surface Mount :

No

Fall Time (Typ) :

30 ns

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Dual Supply Voltage :

650V

Pulsed Drain Current-Max (IDM) :

1.6A

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Series :

CoolMOS™

Drain Current-Max (Abs) (ID) :

0.8A

Nominal Vgs :

3 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

800mA

Qualification Status :

Not Qualified

Power Dissipation :

11W

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Rds On (Max) @ Id, Vgs :

6 Ω @ 500mA, 10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

REACH SVHC :

Unknown

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Power Dissipation-Max :

11W Tc

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

30 ns