SPS02N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Pin Count :

3

Turn On Delay Time :

6 ns

Max Dual Supply Voltage :

600V

Turn-Off Delay Time :

68 ns

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.9V @ 80µA

Dual Supply Voltage :

650V

REACH SVHC :

Unknown

Mounting Type :

Through Hole

Number of Elements :

1

Power Dissipation :

25W

Avalanche Energy Rating (Eas) :

50 mJ

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

3Ohm

Termination :

Through Hole

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

5.4A

Nominal Vgs :

3 V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Rise Time :

3ns

Package / Case :

TO-251-3 Stub Leads, IPak

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.1A, 10V

Lead Free :

Lead Free

Pbfree Code :

No

Published :

2005

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Continuous Drain Current (ID) :

1.8A

Qualification Status :

Not Qualified

Mount :

Through Hole

Drain to Source Breakdown Voltage :

650V

Series :

CoolMOS™

Fall Time (Typ) :

12 ns

Power Dissipation-Max :

25W Tc

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V