SPP21N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

100V

Turn-Off Delay Time :

37 ns

FET Type :

N-Channel

Vgs (Max) :

±20V

JESD-609 Code :

e3

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.08Ohm

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 44μA

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

90W

Drain to Source Breakdown Voltage :

100V

Transistor Element Material :

SILICON

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

38.4nC @ 10V

ECCN Code :

EAR99

Number of Pins :

3

Number of Terminations :

3

Rise Time :

56ns

Mount :

Through Hole

Published :

2002

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

SIPMOS®

Mounting Type :

Through Hole

Power Dissipation-Max :

90W Tc

RoHS Status :

RoHS Compliant

Pin Count :

3

Current Rating :

21A

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

865pF @ 25V

Pulsed Drain Current-Max (IDM) :

84A

Rds On (Max) @ Id, Vgs :

80m Ω @ 15A, 10V

Number of Elements :

1

Continuous Drain Current (ID) :

21A

Fall Time (Typ) :

23 ns