SPP20N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4.5V

Number of Pins :

3

Number of Elements :

1

Current Rating :

20A

Width :

10.26mm

Height :

4.4mm

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

190m Ω @ 13A, 10V

Series :

CoolMOS™

Radiation Hardening :

No

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

40A

Voltage - Rated DC :

650V

Avalanche Energy Rating (Eas) :

690 mJ

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

FET Type :

N-Channel

Halogen Free :

Halogen Free

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Number of Terminations :

3

Rise Time :

25ns

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Continuous Drain Current (ID) :

20A

Turn-Off Delay Time :

140 ns

Package / Case :

TO-220-3

Dual Supply Voltage :

600V

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

103nC @ 10V

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

120 ns

Published :

2005

Pbfree Code :

yes

Nominal Vgs :

4.5 V

Transistor Application :

SWITCHING

Length :

8.64mm

Factory Lead Time :

8 Weeks

Termination :

Through Hole

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Power Dissipation-Max :

208W Tc

Drain to Source Breakdown Voltage :

600V

Max Dual Supply Voltage :

600V

Contact Plating :

Tin

Power Dissipation :

208W

Case Connection :

DRAIN

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Fall Time (Typ) :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)