SPP15P10PH

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

16 ns

JESD-609 Code :

e3

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

Rise Time :

23ns

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

-100V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

128W Tc

Series :

SIPMOS®

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

60A

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.1V @ 1.54mA

Additional Feature :

AVALANCHE RATED

Published :

2007

Rds On (Max) @ Id, Vgs :

240m Ω @ 10.6A, 10V

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.24Ohm

Mounting Type :

Through Hole

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

33 ns

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Package / Case :

TO-220-3

Number of Pins :

3

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

128W

Turn On Delay Time :

9.5 ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

15A

Input Capacitance (Ciss) (Max) @ Vds :

1280pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

-100V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V