SPP10N10
- Mfr.Part #
- SPP10N10
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 10.3A TO220-3
- Stock
- 7,084
- In Stock :
- 7,084
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 10.3A
- Power Dissipation :
- 50W
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 7.8A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-262AA
- Published :
- 2001
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Series :
- SIPMOS®
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 10.3A Tc
- Transistor Element Material :
- SILICON
- Current Rating :
- 10.3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 4V @ 21μA
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Pin Count :
- 3
- Terminal Finish :
- MATTE TIN
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 426pF @ 25V
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Mount :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 19.4nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Power Dissipation-Max :
- 50W Tc
- Voltage - Rated DC :
- 100V
- Datasheets
- SPP10N10

N-Channel Tube 170m Ω @ 7.8A, 10V ±20V 426pF @ 25V 19.4nC @ 10V TO-220-3
SPP10N10 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 426pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10.3A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
SPP10N10 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 10.3A
SPP10N10 Applications
There are a lot of Infineon Technologies
SPP10N10 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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