SPP10N10

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Mfr.Part #
SPP10N10
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 10.3A TO220-3
Stock
7,084
In Stock :
7,084

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
10.3A
Power Dissipation :
50W
Rds On (Max) @ Id, Vgs :
170m Ω @ 7.8A, 10V
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
JEDEC-95 Code :
TO-262AA
Published :
2001
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
60 mJ
Number of Terminations :
3
JESD-609 Code :
e3
Series :
SIPMOS®
FET Type :
N-Channel
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
10.3A Tc
Transistor Element Material :
SILICON
Current Rating :
10.3A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Unknown
Vgs(th) (Max) @ Id :
4V @ 21μA
RoHS Status :
RoHS Compliant
Vgs (Max) :
±20V
Number of Pins :
3
Pin Count :
3
Terminal Finish :
MATTE TIN
Operating Temperature :
-55°C~175°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
426pF @ 25V
Qualification Status :
Not Qualified
Terminal Position :
Single
Mount :
Through Hole
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
19.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Power Dissipation-Max :
50W Tc
Voltage - Rated DC :
100V
Datasheets
SPP10N10
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPP10N10 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, SPP10N10 pinout, SPP10N10 datasheet PDF, SPP10N10 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPP10N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPP10N10


N-Channel Tube 170m Ω @ 7.8A, 10V ±20V 426pF @ 25V 19.4nC @ 10V TO-220-3

SPP10N10 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 426pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10.3A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

SPP10N10 Features


the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 10.3A


SPP10N10 Applications


There are a lot of Infineon Technologies
SPP10N10 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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