SPN04N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e0

Pin Count :

4

Transistor Element Material :

SILICON

Series :

CoolMOS™

Drain-source On Resistance-Max :

0.95Ohm

Drain to Source Breakdown Voltage :

600V

ECCN Code :

EAR99

Power Dissipation-Max :

1.8W Ta

Current Rating :

700mA

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.8A

Turn-Off Delay Time :

130 ns

Number of Elements :

1

Lead Free :

Contains Lead

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

3A

Number of Pins :

4

Vgs (Max) :

±20V

Terminal Finish :

Tin/Lead (Sn/Pb)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

1.8W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

800mA Ta

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Published :

2004

Rise Time :

20ns

Qualification Status :

Not Qualified

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Package / Case :

TO-261-4, TO-261AA

Continuous Drain Current (ID) :

800mA

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 200µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

650V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Fall Time (Typ) :

20 ns