SPN03N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

Voltage - Rated DC :

650V

Vgs (Max) :

±20V

Nominal Vgs :

3 V

Fall Time (Typ) :

3 ns

Series :

CoolMOS™

Continuous Drain Current (ID) :

700mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation :

1.8W

Number of Terminations :

4

JESD-609 Code :

e0

Lead Free :

Contains Lead

ECCN Code :

EAR99

Published :

2004

Pulsed Drain Current-Max (IDM) :

3A

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.7A

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Package / Case :

TO-261-4, TO-261AA

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

JESD-30 Code :

R-PDSO-G4

Number of Pins :

3

Power Dissipation-Max :

1.8W Ta

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3.9V @ 135µA

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

650V

FET Type :

N-Channel

Mount :

Surface Mount

HTS Code :

8541.29.00.95

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Pin Count :

4

Rise Time :

3ns

Terminal Form :

Gull wing

Turn-Off Delay Time :

64 ns

Gate to Source Voltage (Vgs) :

20V

Current Rating :

700mA

Drive Voltage (Max Rds On,Min Rds On) :

10V