SPD35N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

39 ns

ECCN Code :

EAR99

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

245 mJ

Voltage - Rated DC :

100V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.044Ohm

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

100V

JESD-609 Code :

e3

Current Rating :

35A

Published :

2002

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Power Dissipation :

150W

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Terminal Form :

Gull wing

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Series :

SIPMOS®

Rise Time :

63ns

Continuous Drain Current (ID) :

35A

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

140A

Rds On (Max) @ Id, Vgs :

44m Ω @ 26.4A, 10V

Fall Time (Typ) :

23 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Power Dissipation-Max :

150W Tc