SPD30N03S2L07GBTMA1
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- Mfr.Part #
- SPD30N03S2L07GBTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 30A TO252-3
- Stock
- 57,101
- In Stock ：
- 57,101
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 136W Tc
- Turn On Delay Time :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 6.7m Ω @ 30A, 10V
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Drain-source On Resistance-Max :
- 0.0098Ohm
- Fall Time (Typ) :
- 47 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Additional Feature :
- AVALANCHE RATED
- Series :
- OptiMOS™
- Number of Pins :
- 3
- Published :
- 2003
- Rise Time :
- 17ns
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 250 mJ
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2V @ 85µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 62 ns
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 120A
- Continuous Drain Current (ID) :
- 30A
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Number of Elements :
- 1
- Datasheets
- SPD30N03S2L07GBTMA1
N-Channel Tape & Reel (TR) 6.7m Ω @ 30A, 10V ±20V 2530pF @ 25V 68nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N03S2L07GBTMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 250 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2530pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 62 ns.Peak drain current is 120A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SPD30N03S2L07GBTMA1 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 62 ns
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)
SPD30N03S2L07GBTMA1 Applications
There are a lot of Infineon Technologies
SPD30N03S2L07GBTMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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