SPD30P06PGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

250 mJ

Transistor Element Material :

SILICON

Published :

1999

Number of Pins :

3

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.075Ohm

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Rise Time :

11ns

Rds On (Max) @ Id, Vgs :

75m Ω @ 21.5A, 10V

Number of Terminations :

2

Series :

SIPMOS®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1535pF @ 25V

Power Dissipation :

125W

Max Dual Supply Voltage :

-60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

No

Case Connection :

DRAIN

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Halogen Free :

Not Halogen Free

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

30A

Fall Time (Typ) :

20 ns

Reach Compliance Code :

not_compliant

Factory Lead Time :

18 Weeks

Turn On Delay Time :

13 ns

Turn-Off Delay Time :

30 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1.7mA

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

125W Tc

Drain to Source Voltage (Vdss) :

60V