SPD30P06P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

JESD-609 Code :

e3

Published :

2002

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

-30A

Drain to Source Breakdown Voltage :

-60V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 1.7mA

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Turn-Off Delay Time :

30 ns

Number of Elements :

1

RoHS Status :

RoHS Compliant

Power Dissipation :

125W

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.075Ohm

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

20 ns

Transistor Element Material :

SILICON

Number of Terminations :

2

Rise Time :

11ns

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

20

Series :

SIPMOS®

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Power Dissipation-Max :

125W Tc

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

120A

Avalanche Energy Rating (Eas) :

250 mJ

Pin Count :

4

Voltage - Rated DC :

-60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

75m Ω @ 21.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1535pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Terminal Finish :

Matte Tin (Sn)

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

60V