SPD18P06PGBTMA1

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Mfr.Part #
SPD18P06PGBTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 60V 18.6A TO252-3
Stock
124,974
In Stock :
124,974

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
2
Fall Time (Typ) :
11 ns
Rds On (Max) @ Id, Vgs :
130m Ω @ 13.2A, 10V
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~175°C TJ
Max Dual Supply Voltage :
-60V
Pulsed Drain Current-Max (IDM) :
74.4A
Vgs (Max) :
±20V
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Halogen Free :
Not Halogen Free
Continuous Drain Current (ID) :
18.6A
Factory Lead Time :
18 Weeks
Power Dissipation-Max :
80W Tc
Turn-Off Delay Time :
24.5 ns
Number of Elements :
1
Published :
1999
Additional Feature :
AVALANCHE RATED
Power Dissipation :
80W
Mount :
Surface Mount
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lead Free :
Contains Lead
Pbfree Code :
No
Current - Continuous Drain (Id) @ 25°C :
18.6A Tc
Input Capacitance (Ciss) (Max) @ Vds :
860pF @ 25V
Drain to Source Voltage (Vdss) :
60V
Series :
SIPMOS®
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
4V @ 1mA
Terminal Position :
Single
Turn On Delay Time :
12 ns
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-252AB
Terminal Finish :
Tin (Sn)
Rise Time :
5.8ns
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Radiation Hardening :
No
FET Type :
P-Channel
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
ECCN Code :
EAR99
Datasheets
SPD18P06PGBTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPD18P06PGBTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Mounting Type:Surface Mount, SPD18P06PGBTMA1 pinout, SPD18P06PGBTMA1 datasheet PDF, SPD18P06PGBTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPD18P06PGBTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPD18P06PGBTMA1


P-Channel Tape & Reel (TR) 130m Ω @ 13.2A, 10V ±20V 860pF @ 25V 33nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

SPD18P06PGBTMA1 Description


SPD18P06PGBTMA1 is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of SPD18P06PGBTMA1 is -55°C~175°C TJ and its maximum power dissipation are 80W Tc. SPD18P06PGBTMA1 has 3 pins and it is available in TO-252-3, DPak (2 Leads + Tab), and SC-63 packaging way. The Turn-On Delay Time of SPD18P06PGBTMA1 is 12 ns and its Turn-Off Delay Time is 24.5 ns.



SPD18P06PGBTMA1 Features


  • P-Channel

  • Enhancement mode

  • Avalanche rated

  • DV/DT rated

  • 175°C operating temperature



SPD18P06PGBTMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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