SPD18P06PGBTMA1
- Mfr.Part #
- SPD18P06PGBTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 18.6A TO252-3
- Stock
- 124,974
- In Stock :
- 124,974
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 11 ns
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 13.2A, 10V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Max Dual Supply Voltage :
- -60V
- Pulsed Drain Current-Max (IDM) :
- 74.4A
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Halogen Free :
- Not Halogen Free
- Continuous Drain Current (ID) :
- 18.6A
- Factory Lead Time :
- 18 Weeks
- Power Dissipation-Max :
- 80W Tc
- Turn-Off Delay Time :
- 24.5 ns
- Number of Elements :
- 1
- Published :
- 1999
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 80W
- Mount :
- Surface Mount
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Contains Lead
- Pbfree Code :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 18.6A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 860pF @ 25V
- Drain to Source Voltage (Vdss) :
- 60V
- Series :
- SIPMOS®
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Terminal Position :
- Single
- Turn On Delay Time :
- 12 ns
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-252AB
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 5.8ns
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Datasheets
- SPD18P06PGBTMA1

P-Channel Tape & Reel (TR) 130m Ω @ 13.2A, 10V ±20V 860pF @ 25V 33nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
SPD18P06PGBTMA1 Description
SPD18P06PGBTMA1 is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of SPD18P06PGBTMA1 is -55°C~175°C TJ and its maximum power dissipation are 80W Tc. SPD18P06PGBTMA1 has 3 pins and it is available in TO-252-3, DPak (2 Leads + Tab), and SC-63 packaging way. The Turn-On Delay Time of SPD18P06PGBTMA1 is 12 ns and its Turn-Off Delay Time is 24.5 ns.
SPD18P06PGBTMA1 Features
-
P-Channel
-
Enhancement mode
-
Avalanche rated
-
DV/DT rated
-
175°C operating temperature
SPD18P06PGBTMA1 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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