SPD11N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Fall Time (Typ) :

23 ns

Published :

2002

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Transistor Element Material :

SILICON

Series :

SIPMOS®

Turn-Off Delay Time :

29 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 21μA

Rise Time :

46ns

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

60 mJ

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

50W Tc

Case Connection :

DRAIN

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

170m Ω @ 7.8A, 10V

Continuous Drain Current (ID) :

10.5A

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

18.3nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Voltage - Rated DC :

100V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

50W

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Current Rating :

10.5A

JESD-609 Code :

e3