SPD11N10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

SIPMOS®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

29 ns

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Published :

2002

Packaging :

Tape and Reel (TR)

Rise Time :

46ns

Terminal Form :

Gull wing

ECCN Code :

EAR99

JESD-609 Code :

e3

Mounting Type :

Surface Mount

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

170m Ω @ 7.8A, 10V

Vgs (Max) :

±20V

Power Dissipation :

50W

Power Dissipation-Max :

50W Tc

Continuous Drain Current (ID) :

10.5A

Voltage - Rated DC :

100V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Vgs(th) (Max) @ Id :

4V @ 21μA

Pin Count :

4

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Current Rating :

10.5A

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

60 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

18.3nC @ 10V

Fall Time (Typ) :

23 ns