SN7002WL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Published :

2003

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

0.23A

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G3

Drain-source On Resistance-Max :

5Ohm

HTS Code :

8541.21.00.95

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Terminal Position :

Dual

Vgs (Max) :

±20V

Power Dissipation-Max :

500mW Ta

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

5 Ω @ 230mA, 10V

Qualification Status :

Not Qualified

Pin Count :

3

Number of Terminations :

3

Package / Case :

SC-70, SOT-323

Surface Mount :

yes

Mounting Type :

Surface Mount

Series :

SIPMOS®

Vgs(th) (Max) @ Id :

1.8V @ 26μA

Time@Peak Reflow Temperature-Max (s) :

40

Feedback Cap-Max (Crss) :

4.5 pF

FET Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant