SN7002N E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Published :

1996

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

HTS Code :

8541.21.00.95

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

1.8V @ 26μA

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

60V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Transistor Element Material :

SILICON

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

0.2A

Reach Compliance Code :

Compliant

Series :

SIPMOS®

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G3

Surface Mount :

yes

Terminal Position :

Dual

Qualification Status :

Not Qualified

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Power Dissipation-Max :

360mW Ta

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

5Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Feedback Cap-Max (Crss) :

4.2 pF

Package / Case :

TO-236-3, SC-59, SOT-23-3