SN7002N E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Transistor Element Material :

SILICON

Number of Elements :

1

Drain to Source Voltage (Vdss) :

60V

Qualification Status :

Not Qualified

Terminal Position :

Dual

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.8V @ 26μA

Feedback Cap-Max (Crss) :

4.2 pF

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.21.00.95

Drain-source On Resistance-Max :

5Ohm

Power Dissipation-Max :

360mW Ta

Series :

SIPMOS®

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Pin Count :

3

Published :

1996

JESD-30 Code :

R-PDSO-G3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

60V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.2A

Pbfree Code :

yes

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 25V

Reach Compliance Code :

Compliant