SN7002WH6327XTSA1
- Mfr.Part #
- SN7002WH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 230MA SOT323-3
- Stock
- 7,258
- In Stock :
- 7,258
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 8.5 ns
- Length :
- 2mm
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 230mA
- Number of Channels :
- 1
- Halogen Free :
- Halogen Free
- Feedback Cap-Max (Crss) :
- 4.5 pF
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- RoHS Status :
- ROHS3 Compliant
- Height :
- 800μm
- Rise Time :
- 2.8ns
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Package / Case :
- SC-70, SOT-323
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 230mA, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 1.5nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 6 ns
- Current - Continuous Drain (Id) @ 25°C :
- 230mA Ta
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 500mW Ta
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 1.8V @ 26μA
- Published :
- 1996
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- SIPMOS®
- Drain-source On Resistance-Max :
- 5Ohm
- Lead Free :
- Lead Free
- Width :
- 1.25mm
- JESD-609 Code :
- e3
- Power Dissipation :
- 500mW
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 45pF @ 25V
- Max Dual Supply Voltage :
- 60V
- Turn On Delay Time :
- 2.4 ns
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Datasheets
- SN7002WH6327XTSA1

N-Channel Cut Tape (CT) 5 Ω @ 230mA, 10V ±20V 45pF @ 25V 1.5nC @ 10V SC-70, SOT-323
SN7002WH6327XTSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 45pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 230mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 2.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 60V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SN7002WH6327XTSA1 Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
SN7002WH6327XTSA1 Applications
There are a lot of Infineon Technologies
SN7002WH6327XTSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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