SMUN5330DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pin Count :

6

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

187mW

Resistor - Base (R1) :

1k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Polarity/Channel Type :

NPN AND PNP

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Terminal Finish :

Tin (Sn)

Element Configuration :

Dual

Factory Lead Time :

8 Weeks

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Pbfree Code :

yes

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

Base Part Number :

MUN53**DW1

Collector Emitter Voltage (VCEO) :

250mV

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.0

hFE Min :

3

Mounting Type :

Surface Mount

Published :

2012

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Max Collector Current :

100mA

Reference Standard :

AEC-Q101

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Resistor - Emitter Base (R2) :

1k Ω

Number of Elements :

2

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Surface Mount :

yes

Lead Free :

Lead Free

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-609 Code :

e3