SMUN5311DW1T2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Reference Standard :

AEC-Q101

Power Dissipation :

250mW

Resistor - Base (R1) :

10k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

10k Ω

Collector Emitter Voltage (VCEO) :

50V

Surface Mount :

yes

Contact Plating :

Tin

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Max Power Dissipation :

187mW

Pin Count :

6

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 hours ago)

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Polarity :

NPN, PNP

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Continuous Collector Current :

100mA

Number of Pins :

6

hFE Min :

35

Base Part Number :

MUN53**DW1

Halogen Free :

Halogen Free

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Terminations :

6

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Published :

2012

Element Configuration :

Dual

Package / Case :

6-TSSOP, SC-88, SOT-363

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA