SMUN5211DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pin Count :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Terminations :

6

Reference Standard :

AEC-Q101

Transistor Type :

2 NPN - Pre-Biased (Dual)

Resistor - Emitter Base (R2) :

10k Ω

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Element Configuration :

Dual

Polarity :

NPN

Min Operating Temperature :

-55°C

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Current - Collector Cutoff (Max) :

500nA

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

Resistor - Base (R1) :

10k Ω

Radiation Hardening :

No

Base Part Number :

MUN51**DW1T

hFE Min :

35

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Lead Free :

Lead Free

Max Power Dissipation :

187mW

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

50V

Number of Pins :

6

Published :

2012

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

ECCN Code :

EAR99

Number of Elements :

2